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DETERMINATION OF TOTAL EL2 AND NET ACCEPTOR CONCENTRATION IN UNDOPED SI GaAs BY MULTI-WAVELENGTH INFRARED ABSORPTION METHOD

DETERMINATION OF TOTAL EL2 AND NET ACCEPTOR CONCENTRATION IN UNDOPED SI GaAs BY MULTI-WAVELENGTH INFRARED ABSORPTION METHOD
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摘要 Total EL2 concentration distribution and net acceptor concentration distribution in uncloped semi-insulating(SI) LEC GaAs have been measured by multi-wavelength infrared absorption method. The experimental results indicate that total EL2 concentration radial distribution is W-shaped and net acceptor concentration radial distribution is sample-dependent, it can present a n shape, a A shape, or a W shape corresponding to different samples. Total EL2 concentration distribution and net acceptor concentration distribution in uncloped semi-insulating(SI) LEC GaAs have been measured by multi-wavelength infrared absorption method. The experimental results indicate that total EL2 concentration radial distribution is W-shaped and net acceptor concentration radial distribution is sample-dependent, it can present a n shape, a A shape, or a W shape corresponding to different samples.
出处 《Journal of Electronics(China)》 1995年第1期58-65,共8页 电子科学学刊(英文版)
关键词 EL2 ACCEPTOR GAAS Infrared ABSORPTION Distribution EL2 Acceptor GaAs Infrared absorption Distribution
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