摘要
The numerical simulation of two dimensional device is conducted to describe the mechanism of the special substrate current and degradation of submicron LDD structure observed in experiments, and finally, the optimum processes for submicron LDD CMOS are proposed.
The numerical simulation of two dimensional device is conducted to describe the mechanism of the special substrate current and degradation of submicron LDD structure observed in experiments, and finally, the optimum processes for submicron LDD CMOS are proposed.
