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STM image of tungstosilicic acid molecular layer on highly oriented pyrolytic graphite

STM image of tungstosilicic acid molecular layer on highly oriented pyrolytic graphite
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摘要 Molecular layer of tungstosilicic acid (H4SiW12O40) deposited on freshly-cleaved highly oriented pyrolytic graphite (HOPG) was observed by scanning tunneling microscopy (STM) in air at room temperature. The molecular dimension (11.5 Angstrom) of H4SiW12O40 measured by STM is consistent with known crystallographic parameter. We also imaged the boundary of H4SiW12O40 molecular layer on HOPG showing that molecular layer of H4SiW12O40 was formed. It has been proved that individual tungstosilicic acid species is imaged. The probable reason for the formation of the molecular layer is also discussed. Molecular layer of tungstosilicic acid (H4SiW12O40) deposited on freshly-cleaved highly oriented pyrolytic graphite (HOPG) was observed by scanning tunneling microscopy (STM) in air at room temperature. The molecular dimension (11.5 Angstrom) of H4SiW12O40 measured by STM is consistent with known crystallographic parameter. We also imaged the boundary of H4SiW12O40 molecular layer on HOPG showing that molecular layer of H4SiW12O40 was formed. It has been proved that individual tungstosilicic acid species is imaged. The probable reason for the formation of the molecular layer is also discussed.
机构地区 CHINESE ACAD SCI
出处 《Chinese Journal of Chemistry》 SCIE CAS CSCD 1995年第6期493-496,共4页 中国化学(英文版)
基金 Project supported by the National Natural Science Foundation of China.
关键词 tungstosilicic acid HOPG STM tungstosilicic acid HOPG STM
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