摘要
The nanosize AIN particles were prepared by evaporation-condensation method in DC arc nitrogen plasma. Aluminium of high purity (99. 999%) was evaporated and nitrided in nitro-gen plasma by use of high temperature and high re-activity of plasma gas. The purity of nanosize AIN particles is more than 98% (wt%) and the average particle size is about 50nm. The grain growth of nanosize AlN particle is also studied. The results show that the nanosize AlN particle begins to grow up at 900℃ and the grain growth increase rapidly at 1100℃. When the temperature is increased to 1600℃, the surface of nanosize AIN particle has been sintered softly. Results will be beneficial to pre-pare AIN ceramics.
The nanosize AIN particles were prepared by evaporation-condensation method in DC arc nitrogen plasma. Aluminium of high purity (99. 999%) was evaporated and nitrided in nitro-gen plasma by use of high temperature and high re-activity of plasma gas. The purity of nanosize AIN particles is more than 98% (wt%) and the average particle size is about 50nm. The grain growth of nanosize AlN particle is also studied. The results show that the nanosize AlN particle begins to grow up at 900℃ and the grain growth increase rapidly at 1100℃. When the temperature is increased to 1600℃, the surface of nanosize AIN particle has been sintered softly. Results will be beneficial to pre-pare AIN ceramics.
