摘要
回顾了Ⅲ—Ⅴ氮化物材料和GaN-based蓝光LED的研究状况及近期的重大进展,分成两部分先后在本刊发表,首先简要地概述了GaN及其有关化合物的晶体生长技术,较为详细地讨论了衬底选择和外延层的晶体结构。
The status of research on both I - IV nitride materials and GaN-based blue light LEDs is reviewed including exciting recent progress. First, the crystal growth techniques of GaN and related compound materials are discussed. And then attention is paid to the selection of substrates and the characterization of crystal structures of epitaxial
layers.
出处
《应用基础与工程科学学报》
EI
CSCD
1995年第1期1-13,共13页
Journal of Basic Science and Engineering
基金
国家自然科学基金资助项目
