摘要
1 Introduction Carriers in semiconductor quantum wells and superlattices can move in both paral-lel and perpendicular directions to interfaces of layers. Carriers must penetrate poten-tial barriers in their perpendicular movement and therefore, this kind of transport iscalled the carrier tunneling. Since Esaki and Tsu’s initiative research in 1973, especiallyafter the quantum well and superlattice materials came into the world, the carrier tun-neling in semiconductor heterostructures has received comiderable attention: (i) In
基金
Special Scientific Research Foundation for Ph. D Students, PRC.
