吸附溶出伏安表法测定痕量铟的研究

DETERMINATION OFTRACE AMOUTS OF INDIUM BY ADSORPTIVE STRIPPING VOLTAMMETRY

在ＮａＡｃ－ＨＡｃ底液中，铟（Ⅲ）与茜素红形成的络合物在悬汞电极（ＨＭＤＥ）上有良好的吸咐溶出行为，于－０．６２Ｖ（ＶＳ，ＳＣＥ）处有一灵敏的吸咐溶出峰．利用１，５次微分，在１×１０－１０～８×１０－８ｍｏｌ／Ｌ．Ｉ（Ⅲ）浓度范围内，峰峰值与Ｉ（Ⅲ）浓度有良好有线性关系，检出限为７．５×１０－１１ｍｏｌ／Ｌ．用本法测定铜矿中的铟，结果满意．还研究了电流性质和电极过程机理．

The absorptive stripping behaviour the complex formed by In(Ⅲ ) with alizarin red onHmDE has been studied. In0. 02mol/lNaAc- 0. 012mol/l HAc, In (Ⅲ )- alizarin redcompleX gives a sensitive 1. 5thorder differential adsorptive cathodic stripping peak at 0. 62v (us, SCE ). A simple, sensitive and selective adsorptive stripping vol - tammetricmethod has been established for the detrmination of trace indium There is good Linear relationship between the peak height of e'pp and concentration of In(Ⅲ)in the rrange of 1×1010～8×10-8mol/l,and the detection Limit is 7. 5 × 10 -1 lmoL/L. The result the determination of trace in three copper ores is very satisfied. The mechanism of electrode process and corrent property has also been discussed.