摘要
Ⅰ. INTRODUCTIONIn recent years, some strange behaviors of donor-related deep centers （DX center） in semiconductors of Ⅲ-Ⅴ compound mixcrystals such as Ge, Si or Sn in Al<sub>x</sub>Ga<sub>1-x</sub> As and S, Se or Te in GaAs<sub>1-x</sub>P<sub>x</sub>, have attracted much interest. Although the types of basic matters and impurities are different, some properties of the deep centers are almost the same. For example, they introduce one shallow energy level and one or a few deep energy levels; the con-
基金
Project supported by the National Natural Science Foundation of China and the Provincial Natural Science Foundation of Fujian
