摘要
With H_2 and CH_3COCH_3 used as the source gases,the diamond epitaxlal films were obtained on the sythe siged single-crystal diamond(100),(110)and(111)faces by means of the microwave plasma-assisted chemical-vapor-deposition (CVD) method. Epitaxlal growth spirals and growth steps can be observed by scanning electron micrographs. Using micro Raman spectra method,we analysed the contents of graphites and other forms of carbon in the single-crystal diamond thin films.The experimental results showed that there are no other forms of carbon in the epitaxial films.Analysis results of reflection electron diffraction showed that the epitaxial diainond film s on diamond(100)an(110)Surfaces are single-crystal diamond films.
With H<sub>2</sub> and CH<sub>3</sub>COCH<sub>3</sub> used as the source gases,the diamond epitaxlal films were obtained on the sythe siged single-crystal diamond（100）,（110）and（111）faces by means of the microwave plasma-assisted chemical-vapor-deposition （CVD） method. Epitaxlal growth spirals and growth steps can be observed by scanning electron micrographs. Using micro Raman spectra method,we analysed the contents of graphites and other forms of carbon in the single-crystal diamond thin films.The experimental results showed that there are no other forms of carbon in the epitaxial films.Analysis results of reflection electron diffraction showed that the epitaxial diainond film s on diamond（100）an（110）Surfaces are single-crystal diamond films.
