烧结温度对低压ZnO压敏陶瓷显微结构及性能的影响(2)

The Effects Sintering Temperature on Microstructure and Properties of low voltage ZnO varistors (2)

利用传统的电子陶瓷工艺,对ZnO—Bi_2O_3—TiO_2系低压压敏电阻材料,研究了不同烧结温度下材料的相结构,显微组织,电性能与烧结温度的关系。结果表明,在1150～1200℃温度范围内,可通过烧结温度,调整材料的压敏电压值,而材料的非线性系数α变化不大.

In the present Work, ZnO-Bi2O3-TiO2 varistors are prepared by ceramical method and the specimens are sintered in air at temperatures varying from 1080℃ to 1300*. The phase structure, microstructute and the electrical characteristics are studied. the results indicated that the sintered temperature varying from 1150℃ to 1200℃ the varistor's breakdown voltage can be adjusted and in this range the norlinear coefficient a variates more smooth.