摘要
The growth rates of CdTe and CMT on GaAs and on CdTe/GaAs substrates were studied as a function of temperature and gas composition. A Langmuir-Hinshelwood Model for surface reaction control region is suggested. The CdTe/GaAs interface was examined by X-ray double crystal diffraction, laser Raman spectroscopy and transmission electron microscopy (TEM). A defect layer was observed at CdTe/GaAs interface. The relationship between interface qualities and electrical properties of CMT overlayers was discussed.
The growth rates of CdTe and CMT on GaAs and on CdTe/GaAs substrates were studied as a function of temperature and gas composition. A Langmuir-Hinshelwood Model for surface reaction control region is suggested. The CdTe/GaAs interface was examined by X-ray double crystal diffraction, laser Raman spectroscopy and transmission electron microscopy (TEM). A defect layer was observed at CdTe/GaAs interface. The relationship between interface qualities and electrical properties of CMT overlayers was discussed.
