摘要
Based on improved charge control model and combining GSW velocity-field equa-tion, a series of analytical solutions for the static characteristics of HIGFETs such as I<sub>D</sub>-V<sub>D</sub>-V<sub>G</sub>,I<sub>DS</sub>-V<sub>G</sub>, G<sub>m</sub> and C<sub>G</sub> are derived. The results of calculation are compared with experimentaldata reported in references, within the range of V<sub>G</sub>【2V, I<sub>D</sub>【I<sub>DS</sub>, they agree very well. Itis pointed out that two-length model must be considered in the high field region due to higherleakage current between the gate and the drain. The effects of temperature on V<sub>th</sub>, and the effectsof gate length and width, temperature, GaAlAs thickness, source resistance, and GaAs mobilityon G<sub>m</sub> are discussed. Possible approaches for improving performances of HIGEFTs are pointedout according to the above analyses.
Based on improved charge control model and combining GSW velocity-field equa- tion, a series of analytical solutions for the static characteristics of HIGFETs such as I_D-V_D-V_G, I_(DS)-V_G, G_m and C_G are derived. The results of calculation are compared with experimental data reported in references, within the range of V_G<2V, I_D<I_(DS), they agree very well. It is pointed out that two-length model must be considered in the high field region due to higher leakage current between the gate and the drain. The effects of temperature on V_(th), and the effects of gate length and width, temperature, GaAlAs thickness, source resistance, and GaAs mobility on G_m are discussed. Possible approaches for improving performances of HIGEFTs are pointed out according to the above analyses.
