摘要
When a linear voltage ramp is applied to the gate of a MOS capacitor,a capacitance-time(C-t)transient is observed.The MOS capacitor is biased into strong inversion before apply-ing the voltage ramp in order to eliminate surface generation.From C-t transient curve obtainedexperimentally the minority carrier generation lifetime in semiconductor can be determined.Theexperimental results show that for the same sample the lifetimes extracted from C-t curves un-der varying voltage sweep rates are close each other,and they are consistent with the lifetimesextracted by saturation capacitance method.
When a linear voltage ramp is applied to the gate of a MOS capacitor,a capacitance- time(C-t)transient is observed.The MOS capacitor is biased into strong inversion before apply- ing the voltage ramp in order to eliminate surface generation.From C-t transient curve obtained experimentally the minority carrier generation lifetime in semiconductor can be determined.The experimental results show that for the same sample the lifetimes extracted from C-t curves un- der varying voltage sweep rates are close each other,and they are consistent with the lifetimes extracted by saturation capacitance method.
