摘要
Metalorganic chemical vapor deposition(MOCVD) growth of homo-and hetero-epitaxial GaSb has been investigated,by using trimethylgallium(TMGa)and trimetbylantimony(TMSb)as source materials on n-type GaSb and semi-insulating GaAs substrates.The influence of Ⅲ/Ⅴ ratio on the growth of GaSb was studied in detail and it was found that the Ⅲ/Ⅴ ratio range proper for good quality epi-layers is narrow.The carrier mobility and concentration of undoped GaSb epi-layers are about 600 cm^2/Ⅴ·s and 2～4×10^(16)cm^(-3)at room temperature,respectively.The low temperature(77K)mobility is about 5 times of the room temperature's one.The low temperature(11K)photoluminescence(PL)spectrum and the temperature depen- dence of PL spectrum were investigated.The red shift of bound exciton with temperature was observed.
Metalorganic chemical vapor deposition(MOCVD) growth of homo-and hetero-epitaxial GaSb has been investigated,by using trimethylgallium(TMGa)and trimetbylantimony(TMSb)as source materials on n-type GaSb and semi-insulating GaAs substrates.The influence of Ⅲ/Ⅴ ratio on the growth of GaSb was studied in detail and it was found that the Ⅲ/Ⅴ ratio range proper for good quality epi-layers is narrow.The carrier mobility and concentration of undoped GaSb epi-layers are about 600 cm^2/Ⅴ·s and 2～4×10^(16)cm^(-3)at room temperature,respectively.The low temperature(77K)mobility is about 5 times of the room temperature's one.The low temperature(11K)photoluminescence(PL)spectrum and the temperature depen- dence of PL spectrum were investigated.The red shift of bound exciton with temperature was observed.
