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THE INFLUENCE OF INTERACTION POTENTIALS ON COMPUTER SIMULATION RESULTS OF SPUTTERING

THE INFLUENCE OF INTERACTION POTENTIALS ON COMPUTER SIMULATION RESULTS OF SPUTTERING
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摘要 In all studies of the interaction of energetic particles with solids, the interatomic potential plays an important role. In many processes it is the dominant factor in the events which lead to backscattering, sputtering, radiation damage and to the spatial distributions of implanted ions and recoiling atoms. The reason for this is that there is the relationship between the scattering angle θ(ε, b) in the CM system and the interatomic potential V(x) as follows:
出处 《Chinese Science Bulletin》 SCIE EI CAS 1992年第22期1877-1880,共4页
基金 Project supported by the National High Technology 863 of China
关键词 SPUTTERING INTERACTION POTENTIAL MONTE Carlo simulation sputtering interaction potential Monte Carlo simulation
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