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STUDIES ON ION IMPLANTATION AND ELECTRICAL PROPERTIES OF POLYACETYLENE FILMS

STUDIES ON ION IMPLANTATION AND ELECTRICAL PROPERTIES OF POLYACETYLENE FILMS
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摘要 The effects of ion implantation on ployacetylene films PA have been studied with Ar^+, Fe^+, C1^+, I^+, Na^+ and K^+ ions in the energy range of 15—30 keV. The changes of PA films in the electrical conductivity, due to chemical doping and ion implantation in relation to their structure and depth profiles of impurities, were measured through infrared (ATR/FTIK), Rutherford backscattering spectrometry (RBS) and the four probe technique. In all cases, ion implantation of active ions exhibits the same effects as chemical doping. The formation of p-n junction is observed at the interface of implanted region and chemical doped PA substrate. The mechanism of interaction process between ion beam and polymer is also discussed. The effects of ion implantation on ployacetylene films PA have been studied with Ar^+, Fe^+, C1^+, I^+, Na^+ and K^+ ions in the energy range of 15—30 keV. The changes of PA films in the electrical conductivity, due to chemical doping and ion implantation in relation to their structure and depth profiles of impurities, were measured through infrared (ATR/FTIK), Rutherford backscattering spectrometry (RBS) and the four probe technique. In all cases, ion implantation of active ions exhibits the same effects as chemical doping. The formation of p-n junction is observed at the interface of implanted region and chemical doped PA substrate. The mechanism of interaction process between ion beam and polymer is also discussed.
出处 《Science China Chemistry》 SCIE EI CAS 1992年第1期10-18,共9页 中国科学(化学英文版)
基金 Project supported by the National Natural Science Foundation of China
关键词 POLYACETYLENE ION implantation. polyacetylene, ion implantation.
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