MEASUREMENTS OF REFRACTIVE INDICES OF Ⅱ-Ⅵ WIDE GAP SEMICONDUCTOR STRAIN ED-LAYER SUPERLATTICES

I. INTRODUCTION The wide gap semiconductor superlattioes and quantum wells fabricated by ZnS, ZnSe and ZnTe are expected to be greatly useful in the optoelectronics area in the visible region. 600-700 nm wavelength optoelectronic devices with these structures have attracted much interest for the use in high-density optical information systems.