摘要
The formation process and multi-layer structures of silicon-on-insulator (SOI) materialsformed by high-dose N^+ and O^+ implantation and high-temperature annealing have been inves-tigated. Infrared (IR) absorption and reflection spectra have been measured for SOI struc-tures. From detailed theoretical analysis and computer simulation of the IR reflection interfer-ence spectra, refractive index profiles of SOI structures were obtained. It has been provedthat the high-quality SOI materials could be produced with ion beam techniques. The resultsof this study also indicate that the IR absorption and reflection spectroscopic measurementare nondestructive and effective methods to examine the quality of SOI materials.
The formation process and multi-layer structures of silicon-on-insulator (SOI) materialsformed by high-dose N^+ and O^+ implantation and high-temperature annealing have been inves-tigated. Infrared (IR) absorption and reflection spectra have been measured for SOI struc-tures. From detailed theoretical analysis and computer simulation of the IR reflection interfer-ence spectra, refractive index profiles of SOI structures were obtained. It has been provedthat the high-quality SOI materials could be produced with ion beam techniques. The resultsof this study also indicate that the IR absorption and reflection spectroscopic measurementare nondestructive and effective methods to examine the quality of SOI materials.
