金属硅化物的离子溅射修正

ION SPUTTERING CORRECTION FOR METAL-SILICIDES

低能离子溅射金属硅化物是制备半导体器件的重要工艺过程。本文总结了文献报道的Cr-Si、Mo-Si、V-Si、Ti-Si、Co-Si和Cu-Si金属硅化物经低能惰性离子轰击后表面成分变化的一些实验现象,用我们提出的理论修正模型计算了离子溅射修正因子,发现得到的理论修正关系能够较好的解释全部实验结果。此外,用本文的理论修正关系讨论了影响离子溅射修正因子的一些因素,给出了溅射修正因子随原子表面升华能的变化曲线,可望用于金属硅化物离子溅射的定量修正。

Low energy ion sputtering of metal-silicide plays an important role in the semiconductordevice process. The phenomena of the changes of surface composition for metal-silicides,Cr-Si, Mo-Si, V-Si, Ti-Si, Co-Si and Cu-Si, Which sputtered by low energy inert gasions,were summarized in this paper, according to the experimental results reported by the litera-tures. It was diffcult to explain by present theories. A new procednre for calculating the ionsputtering correction have been developed. The ion sputtering correction factors were calcu-lated for these metal-silicides with our model. We found that it was in agreement with theexperimental results reported by the literatures. In addition, a possible relation between thecorrection factor and the sublimation energy of the metallic element was given, and somefactors, such as preferential sputtering, ion radiation-iuduced, segregation and radiation-enhanced diffusion, which affect the ion sputtering correction factor were discussed by ourtheory.