ICB方法外延CdTe单晶薄膜

MONOCRYSTALLINE CdTe FILMS GROWN BY ICB EPITAXY

用ICB外延技术在NaCl解理面和(100)GaAs衬底上外延的CdTe单晶薄膜,以透射电子衍射及RHEED分析,都表明获得了好的单晶结构及平滑膜面。外延取向关系为:GdTe(100)//NaCl(100);当衬底预处理温度为480℃时,CdTe(100)//GaAs(100);当预处理温度为580℃时,CdTe(100)+(111)//GaAs(100)。实验发现,当坩埚内CdTe蒸气压足够高时,薄膜生长体现出团粒束淀积所特有的规律,即随着团粒能量的增大,CdTe外延膜的结构质量显著改善。在CaAs衬底上外延所得的最好的CdTe膜,其双晶衍射摆动曲线半高宽为630arc,

Epitaxial films of CdTe were grown on NaCl cleavage surface and GaAs(001)substratesby Ionized Cluster Beam epitaxy. Transmission electron diffraction and RHEED analyses.indicate that good crystallinity and surface flatness have been achieved. The epitaxial orien-tation relationships are: CdTe (100)//NaCl (100): CdTe (100) //GaAs (100) by substratepreheating at 480℃; CdTe (100)+(111) //GaAs (100) by substrate preheating at 580℃. Thecharacteristics of ICB growth was also investigated and it was found that, when sufficientclusters were generated in the deposition beam, the quality of the CdTe epilayer was im-proved significantly, with the increase of the kinetic energy of the CdTe clusters. The bestCdTe epilayer grown on the GaAs substrate exhibited a CdTe(400) DCRC having the FWHMof 620 arc·s.