GaAs-Al_x Ga_(1-x)As异质结的SIMS定量分析

QUANTITATIVE ANALYSIS OF GaAs-Al_xGa_(1-x)As HETEROJUNCTION BY SIMS

本文利用二次离子质谱对GaAs^-AI_xGa_(1-x)As异质结进行了定量深度分析。首先,在对LTE模型中的温度T的物理意义作了进一步探讨的基础上,提出采用相对灵敏度因子结合双定标的LTE模型法,对GaAs-Al_xGa_(1-x)As异质结的元素成份进行定量分析,获得了满意的结果,此外,本文利用Ta_2O_5-Ta标准陡峭界面对SIMS溅射剖面进行弧坑效应修正,得到异质结中元素的深度分布曲线,从而给出异质结中各种元素随深度的浓度分布。

Quantitative profile of GaAs-Al_XGa_(1-X) As heterojunction was obtained by SIMS.After studying the physics meaning of tempreture T in LTE model, we proposeda quantitative method-LTE model with two inner standard elements combined withRSF method. A satisfactory result was obtained by using this method to GaAs-Al_XGa_(1-X) As heterojunction. Besides, we use Ta_2O_5-Ta standard sharp interface to cor-rect the sputtering profile and have obtained the depth distributions of variouselements in the heterojunction. Then, depth quantification of GaAs-Al_XGa_(1-X)Asheterojunction was fulfilled.