摘要
Since anomalous Hall effect, anomalous magnetoresistance effect and anomalous electric conductivity effect were discovered in n-Ge semiconductor at room temperature, anomalous Hall effect has been successfully explained with the inversion layers model. In order to investigate further the law that gives rise to anomalous electromagnetic features in n-Ge sample at room temperature, heat treatment to n-Ge sample was performed so as to cause acceptor heat defect compensation in n-Ge semiconductor, which will form an inversion layer
