分子束外延技术及其进展

MOLECULAR BEAM EPITAXY TECHNIQUE

由于高频、高速光电子器件发展的需要,器件工作层的厚度及尺寸愈来愈小,已经较成熟的液相外延、汽相外延、真空淀积等薄膜制备方法已不能满足要求。许多新发展起来的多层异质器件,在某些场合希望组分和掺杂有较陡的分布。

Molecular beam epitaxy(MBE) is a versatile technique for growing superlattice and microstructures made of semi-conductors, metals or insulators. Present paper is an introduction to the MBE technique. The first-section provides a gener-al outline of MBE. The second section deals with technological equipment. Several evolutions in MBE technique such asRHEED intensity oscillation,pulsed beam deposition technique (PLE and MEE) and a focused ion beam implanter-MBEcrystal growth and processing system are discussed in the third section. On the last part,gas source MBE-a modification ofthe MBE technique is described.