二维短沟道SOI-MOSFET器件的阈值电压

THRESHOLD VOLTAGE OF TWO-DIMENSIONAL SHORT-CHANNEL SOI DEVICES

本文提出了一种正确的直稳态二维短沟道SOI-MOSFET器件的数值模型。所选用的基本方程是:泊松方程,两种载流子的电流连续性方程和电流密度方程。这个模型从SOI器件的特殊结构出发,着重考虑了复合-产生率对器件内部参数的影响以及阈值电压随器件不同条件的变化关系。

An exact number simulator for steady-state two-dimensional short-channelSOI devices is presented. Basic equations are Poisson's equation, the currentcontinuity equation and current density equation for two kinds of carriers.Thesimulator, considering with the special structure of SOI devices, studies theinfluences of recombination-generation rate on parameters of internal devicesand analyze threshold voltage of two dimensional short channel SOI devices.