SRAM型FPGA瞬时电离辐射功能错误实验研究

Experimental Investigations on Transient Ionizing Radiation Induced Function Errors of SRAM Based FPGA

定性分析了SRAM型FPGA瞬时电离辐射功能错误,认为功能错误阈值与敏感配置位数无关。设计了两种敏感配置位数相差悬殊的由查找表和D触发器构成的移位寄存器链,在"强光一号"加速器上开展了FPGA瞬时电离辐射效应实验研究,对比了各功能输出在不同剂量率下的功能错误情况,结果未发现敏感配置位数对功能错误阈值有任何影响,验证了定性分析结论。

On the basis of qualitative analysis of the transient ionizing radiation function errors for SRAM based FPGA, the function error threshold was considered to be independent of the quantity of sensitive configuration bits. Different shift registers made up of look up tables and D flip-flops with quite different quantity of sensitive configuration bits were designed. Experimental investigations were performed using pulse gamma ray generated by 'Qiang Guang-I' accelerator. Comparing with the function status of those circuits under different dose rates, experimental results show that no evidence of the number of sensitive configuration bits affects the function error threshold, and the qualitative analysis is verified.