摘要
通过理论分析和PIC数值模拟,研究了阳极腔区结构对无箔二极管I-V特性的影响,得到了束流强度和结构影响因子的变化规律。研究发现,当阴阳极间距大于0时,无箔二极管的结构影响因子随着阳极腔区半径的增大而减小并逐渐趋于稳定,且对于较小的阴极外半径、较大的漂移管半径、较大的阴阳极间距,达到稳定后的结构影响因子越小,并给出了结构影响因子的可调节范围。在TPG700脉冲驱动源上开展了初步实验研究,对实验中的回流电子束进行数值模拟分析并去除其影响以后,实验结果很好地符合了理论分析结论。
The study on the I-V characteristic of a foilless diode with a small anode cavity shows that,for a foilless diode with a positive anode-cathode gap space,the geometry factor in the I-Vcharacteristic decreases and tends to be steady with the increase of anode cavity ra- dius.With a smaller cathode radius,a larger drift tube radius or a wider anode-cathode gap space,the equilibrium value of the geometry factor is smaller.Based on the analysis,the range of the geometry factor for the foilless diode is obtained with the consideration of the in- fluence of anode cavity radius.Experimental validation has been carried out on a repetitive pulse power generator TPG700.The results agree well with the theoretical analysis on ac- count of the parasitical losses of the intense electron beam.
出处
《现代应用物理》
2013年第3期246-250,共5页
Modern Applied Physics
