ZnO:Al透明导电薄膜微观结构及电学性能研究

Study on Microstructure and Electrical Properties of ZnO:Al Thin Films Prepared by Sol-gel Method

采用溶胶凝胶法制备ZnO:Al薄膜,研究掺杂浓度、热处理温度对薄膜的结晶性能、微观形貌以及电学性能的影响。用X射线衍射仪(XRD)和扫描电子显微镜(SEM)对其物相、结构和形貌进行分析,霍尔效应测量系统测试薄膜的电阻率。分析表明:在溶胶浓度为0.6mol/L,Al掺杂浓度为1.0%,前期热处理温度与后期热处理温度在400～450℃区域内,ZnO薄膜表面致密,晶体颗粒均匀,(002)晶面取向性好,且其表面电阻率最低,为47.17·cm。

ZnO:Al thin films were prepared by sol-gel method. The effects of Al doping concentration and heat treatment temperature on the crystallization properties, microstructures and electrical properties were investigated by controlling preparation process. X-ray diffraction (XRD) and scanning electron microscope (SEM) were used to characterize the phase, structure and morphology of the films. Hall effect measurement system was used to test the electrical resistivity. The results indicate that when the concentration of zinc acetate is 0.6 mol/L, Al doping concentration is 1.0%, and the heat treatment temperature range is 400～450 ℃, the surface of ZnO thin film is most compact, the grains distribute uniformly, and the optimum electrical resistivity is 47.17 ·cm.