聚碳硅烷高温裂解原位生成SiC涂层研究

In-Situ Generation of SiC Coating by Polycarbosilane Pyrolysis

以氯铂酸为催化剂,二甲苯为助溶剂,聚碳硅烷(PCS)和二乙烯基苯(DVB)为基体,制备碳化硅先驱体浆体,采用浸渍-干燥-交联-高温裂解的方法原位制备碳化硅致密涂层,碳化硅涂层直接生长在碳化硅基体上,可实现碳化硅涂层与碳化硅基体的无差别结合。利用SEM、EDS对涂层进行表征。结果表明:可以利用碳化硅先驱体高温裂解原位生成SiC类涂层,经过浸渍4次处理后,试样的平均吸水率可由6.90%降低到1.69%。

Polycarbosilane, divinylbenzene, dimethylbenzene and chloroplatinic acid were used in preparation of polycarbosilane precursor paste and in situ formation of SiC coating with impregnating, drying, crosslinking and pyrolysis processing. The mineral composition and the surface morphology were investigated using SEM and EDS. Results show that it is feasible to in situ form SiC coating by polycarbosilane pyrolysis. The water absorption of SiC coating, with 4 times impregnating, drying, crosslinking and pyrolysis processing, was reduced from 6.9% to 1.69%.