摘要
For Pt(Ag)/ZnO single-layer/Pt structure,random 10 formation and rupture of conductive filaments composed by oxygen vacancies or metallic ions often cause dispersion problems of resistive switching(RS)parameters,which is disadvantageous to devices application.In this study,ZnO/CoOx/ZnO(ZCZ)tri-layers were utilized as the switching layers to investigate their RS properties as compared with ZnO-based single-layer devices.It is interestingly noted that Pt/ZCZ/Pt devices show quite stable bipolar RS behaviors with little resistance value fluctuations compared to Ag/ZCZ/Pt devices and Pt(Ag)/ZnO/Pt devices,which minimize the dispersion of the resistances of RS.This highly stable RS effect of Pt/ZCZ/Pt structure would be promising for high density memory devices.
For Pt(Ag)/ZnO single-layer/Pt structure,random 10 formation and rupture of conductive filaments composed by oxygen vacancies or metallic ions often cause dispersion problems of resistive switching(RS)parameters,which is disadvantageous to devices application.In this study,ZnO/CoOx/ZnO(ZCZ)tri-layers were utilized as the switching layers to investigate their RS properties as compared with ZnO-based single-layer devices.It is interestingly noted that Pt/ZCZ/Pt devices show quite stable bipolar RS behaviors with little resistance value fluctuations compared to Ag/ZCZ/Pt devices and Pt(Ag)/ZnO/Pt devices,which minimize the dispersion of the resistances of RS.This highly stable RS effect of Pt/ZCZ/Pt structure would be promising for high density memory devices.
基金
supported by the National Natural Science Foundation of China (Nos.51231004 and 51202125)
National Basic Research Program of China (No.2010CB832905)
