采用半导体光放大器抑制SFS相对强度噪声

Using semiconductor optical amplifier to suppress the relative intensity noise of superfluorescent erbium-doped fiber source

相对强度噪声作为光源噪声之一,当光源光功率达到一定程度时,在量级上将取代散粒噪声和热噪声成为光源噪声的主要部分。为解决此问题,作者提出一种采用饱和半导体光放大器抑制相对强度噪声的全新方案。在传统光源结构的基础上,将光源与耦合器之间加入一级半导体光放大器,使光源出光功率达到半导体光放大器深饱和区,从而实现对相对强度噪声的抑制。通过对采用半导体光放大器的光源结构进行相对强度噪声测量发现,在各个频率处相比原有光源结构,均有10 d B/Hz的下降。实验结果表明,采用半导体光放大器的光源方案实现过程简单,可靠性高,在提高光功率的基础上降低了相对强度噪声。

The relative intensity noise of light source will become the main part of light noises instead of shot noise and thermal noise when the light source power reaches a certain level. To solve this problem, the authors propose a new method which uses a semiconductor optical amplifier to suppress the relative intensity noise. Based on the structure of the conventional light source, the semiconductor optical amplifier is added between the light source and the coupler to ensure the optical power of light source reaching the deep saturation region of the semiconductor optical amplifier. Experiment results show that the relative intensity noises of the new structure at various frequencies can all be reduced by ~10 dB/Hz. The new scheme is easy to implement, has high reliability, and can suppress the relative intensity noise with increased light source power. ©, 2015, Editorial Department of Journal of Chinese Inertial Technology. All right reserved.