一种基于基片集成波导技术的引线键合结构

A Wire Bonding Structure Based on Substrate Integrated Waveguide Technology

当前微波毫米波芯片的引线键合主要是在芯片焊盘和微带线之间实施,当工作频率达到毫米波频段,引线键合的性能对键合线属性及微带线加工精度的敏感度越来越高,键合操作中键合线长度的差异或微带线加工的误差都可能导致键合性能的快速恶化。文章提出了一种基于基片集成波导(SIW)的引线键合结构,该结构直接使用SIW与芯片焊盘或其他电路进行键合,对比现有微带键合方案,使用本文提出的基于SIW的键合方案,可以显著减小加工精度的敏感度,同时减少对介质基片的限制等。文章分别设计了无源和有源SIW键合结构,仿真和测试结果表明:基于SIW的键合结构拥有良好的键合性能,相比微带键合结构,降低了传输损耗、降低了对结构尺寸的灵敏度、改善了键合性能。

Current microwave and millimeter wire bonding is mainly implemented between the chip pad and the microstrip line. When the operating frequency is up to millimeter wave,the performance of wire bonding shows a high sensitivity to the properties of the bonding wire and the microstrip line precision,any small errors on length of bonding wire or microstrip line may lead to rapid deterioration of the bonding performance. In this paper,a novel wire bonding structure based on Substrate Integrated Waveguide( SIW) is proposed,which is used to make wire bonding between SIW and millimeter wave chips or other circuit elements. Compared to the conventional microstrip wire bonding scheme,the proposed solution can reduce the sensitivity to the PCB production accuracy and the limitations on the substrate. The passive and active SIW bonding structures are designed and fabricated separately. The simulated and measured results show that the SIW wire bonding structure has good performance,compared to the microstrip wire bonding structure,it reduces the transmission loss and improves the wire bonding performance.