铁电存储单元单粒子翻转机理仿真研究

Simulation Study of Single Event Upset in Ferroelectric Memory Cell

采用电路仿真的方法对铁电存储单元中不同电路节点的单粒子效应敏感性进行了研究,分析了铁电存储单元发生单粒子翻转的机理.仿真结果表明,铁电存储单元的单粒子翻转效应与铁电电容的极化状态有关.当单粒子入射阵列中截止态NMOS管时,只会造成存"0"铁电电容的极化翻转;板线上的单粒子瞬态脉冲对存储数据无影响.根据2T2C和1T1C型铁电存储单元的读出方式,分别分析了可能发生的数据翻转类型.提出了铁电存储单元抗单粒子翻转的加固措施.

The single event effect sensitivity of different circuit nodes in the ferroelectric memory cell is studied by circuit simulation,and the single event upset mechanism of the ferroelectric memory cell is analyzed.The simulation results show that the upset of the ferroelectric memory cell depends on the polarization state of the ferroelectric capacitor.When a high energy particle strikes the off-state NMOS in the memory array,the polarization reversal only happens to the corresponding ferroelectric capacitor which stored data'0'.Based on the readout methods of the2T2 Cand 1T1Cferroelectric memory cell,the upset types of the output data are analyzed.Some methods to harden the FRAM cell against SEU are also proposed.