摘要
采用0.13μm SiGe BiCMOS工艺设计了一种应用于C波段相控阵雷达T/R组件的单片全集成射频功率放大器(RFPA).该放大器采用单级单端Cascode结构,工作于AB类,实现了包括偏置电路和匹配电路在内的片上全集成.芯片总面积为1.4mm×0.8mm(包括Pad).测试结果显示,在4~6GHz范围内,PA的小信号增益S21大于18dB,输入回波损耗S11小于-10dB.在5GHz中心频率下,PA的输出1dB压缩点为18.6dBm,功率附加效率为26%.最大输出功率为23.8dBm,最大功率附加效率为39.2%.设计的单级功放实现了较高的增益和效率.
A single-chip fully-integrated SiGe BiCMOS Power Amplifier(PA)is presented for the C-Band phased Array Radar T/R module based on 0.13μm SiGe BiCMOS process.The structure of the presented PA is single stage,single-end and Cascode,working in Class AB.The bias circuits and impedance match circuits are all integrated on a single chip.The total area of the chip is 1.4mm*0.8mm(include Pad).Test results show that in band of 4-6GHz,this PA gets the small-signal gain S21 of more than18 dB,the input return loss S11 of less than-10 dB.At the center frequency of 5GHz,the PA has an output 1dB compression point of 18.6dBm and a PAE of26%.The maximum output power is 23.8dBm.The maximum PAE is 39.2%.This single stage PA achieve high gain and PAE.
出处
《微电子学与计算机》
CSCD
北大核心
2015年第6期142-145,150,共5页
Microelectronics & Computer
基金
国防科工局国防基础科研十二五重点项目(a1120132002)
