氧化铟锡TCO薄膜的制备及其结晶性能研究

Preparation and Crystalline Characteristics of Indium-Tin-Oxide TCO Thin Films

以掺锡氧化铟陶瓷靶材作为溅射源,采用磁控溅射技术在玻璃衬底上制备了氧化铟锡(ITO)透明导电薄膜,通过X-射线衍射仪(XRD)和X-射线光电子能谱仪(XPS)测试表征,研究了生长温度对薄膜结晶性质和微结构性能的影响.结果表明:所沉积的ITO薄膜均具有体心立方的多晶结构,其生长特性和微结构性能明显受到生长温度的影响.生长温度升高时,薄膜(222)晶面的织构系数T_(C(222))和晶粒尺寸先增后减,而晶格应变和位错密度则先减后增.当生长温度为500 K时,ITO样品的织构系数T_(C(222))最高(1.5097)、晶粒尺寸最大(52.8 nm)、晶格应变最低(1.226×10^(-3))、位错密度最小(3.409×10^(14)m^(-2)),具有最佳的(222)晶面择优取向性和微结构性能.

The transparent conducting oxide ( TCO ) thin films of indium-tin oxide ( ITO ) were deposited on glass substrates by magnetron sputtering technique using a sintered ceramic target with a mixture of SnO 2 and In2 O3 .The influence of growth temperature on the crystalline characteristics and mirostructural properties of ITO thin films was analyzed by X-ray diffraction ( XRD ) and X-ray photoelectron spectroscopy ( XPS ) , respectively .The results indicate that the deposited thin films are polycrystalline in nature having a cubic bixbyite type crystal structure .The crystalline and mirostructural properties of the thin films are observed to be subjected to the growth temperature .With the increment of growth temperature, the texture coefficient of (222) plane (TC(222)) and grain size (D) rise in advance then fall, but the lattice strain (ε0 ) and dislocation density (δ0 ) take on a opposite trend .When the growth temperature is 500 K, the deposited ITO sample exhibits the best crystalline and microstructural properties , with the highest TC(222) of 1.5097, the largest D of 52.8 nm, the lowest ε0 of 1.226 ×10 -3 and the minimum δ0 of 3.409 ×1014 m-2 .