摘要
研究了 1MeV电子辐照对中波碲镉汞光导器件的影响 .通过测试辐照前后光导器件的室温和低温体电阻、响应光谱、电流响应率和探测率等性能参数 ,结果发现经过电子辐照 ,器件的峰值和截止波长在辐照后向短波方向移动 .在辐照剂量大于 10 15/cm2 时 ,器件的室温电阻和响应率明显下降 .
Radiation effects of 1 MeV electron on middle wavelength Hg1-xCdxTe photoconductive detectors were studied. Room and liquid nitrogen temperatures resistance, response spectrum, current responsivity and detectivity were measured before and after irradiation. It is observed that after irradiation, the detectors' peak and cutoff wavelength move towards short wavelength; the room temperature resistance and current responsivity become decreasing when irradiation dosage is larger than 10(15)/cm(2); the detectivity doesn't show a monotonical change owing to the influnce of noise.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2004年第3期172-175,共4页
Journal of Infrared and Millimeter Waves
基金
上海市科学技术委员会部分资助项目 ( 0 116610 82
OIQA14 0 45 )
