光子存储单元的光伏效应

PHOTOVOLTAIC EFFECT IN A PHOTON STORAGE CELL

报道了光存储效应在一种特殊设计的光存储单元Ⅰ Ⅴ特性上的响应 .当单元偏置在光存储模式下 ,越过禁带的光激发会产生一个台阶状的电流阶跃 .利用瞬态光电流测试装置测量电流阶跃处的瞬态响应 ,验证了“开关”光电流下降沿主要反映了光照消失后原先被存储起来的电子、空穴的衰变过程 .其时间常数是光存储时间的一种度量 ,而光照下所出现的台阶状电流阶跃则是光子存储效应在Ⅰ

The response of photonic memory effect in I-V characteristics of a specially designed photonic memory cell was reported. When the cell is biased in a storage mode, the optical excitation with the photon's energy larger than the energy gap gives rise to a step-like jump in the current. A set-up was used to measure the transient photocurrent at the biases where the step-like jump showed up. It is proved that the falling transient edge of the photocurrent, as the photoexcitation turns off, mainly maps the decaying of electrons and holes, which were previously stored in the cell during the illumination. Its time constant is a measure of photonic memory time.