摘要
从基本的非线性光学三阶极化率出发 ,分析半导体量子点中双激子的双光子共振吸收三阶极化率 ,得到 2个入射频率光电场和只有 1个入射频率光电场的简并情况下双光子共振吸收三阶极化率 ,讨论了三阶极化率的实部和虚部在双光子共振频率附近的行为 ,随着共振频率宽度的增大 ,三阶极化率的实部和虚部很快减小 。
Based on the basic relation of the third order susceptibility in nonlinear optics, the two photon absorption of the biexciton in semiconductor quantum dots is analyzed. The third order susceptibility in the degenerate case is presented and discussed. Sharp structures are seen at the biexciton resonance. The two photon resonance is sensitive to the off resonance value of the transition.
出处
《北京师范大学学报（自然科学版）》
CAS
CSCD
北大核心
2004年第3期338-342,共5页
Journal of Beijing Normal University(Natural Science)
基金
教育部高等学校骨干教师资助计划项目
关键词
半导体量子点
双激子
三阶极化率
双光子共振吸收
semiconductor quantum dots
biexciton
third-order susceptibility
two-photon absorption
