MEMS器件制造工艺中的高深宽比硅干法刻蚀技术

Dry etching technique for silicon of high aspect ratio in MEMS device fabrication

硅的高深宽比刻蚀技术是MEMS领域中的一项关键工艺。在硅片上形成高深宽比沟槽并拥有垂直侧壁结构是现在先进MEMS器件的一个决定性要求。本文分别介绍了国际上近年来使用F基和Cl2等离子体获得高深宽比的刻蚀方法并进行了比较,总结了各自的优缺点及适用范围。

High aspect ratio of microstructuring is one of the key processes in the MEMS field. The ability of flexible pattern transfer into silicon with vertical sidewalls and high accuracy is a crucial requirement in nowadays advanced MEMS device. The methods for Si etching of high aspect ratio using Cl2 and F-based gases and compared the differences between Cl2 and F-based dry etching are introduced.