沉积温度对电子束蒸发沉积ZrO_2薄膜性质的影响

Influence of Deposition Temperature on the Properties ofZrO_2 Films Prepared by Electron Beam Evaporation

ZrO2 薄膜样品在不同的沉积温度下用电子束蒸发的方法沉积而成。利用X射线衍射 (XRD)仪和原子力显微镜 (AFM)检测了ZrO2 薄膜的晶体结构和表面形貌 ,发现室温下沉积ZrO2 薄膜样品为非晶结构 ,随着沉积温度升高 ,ZrO2 薄膜出现明显的结晶现象 ,在薄膜中同时存在四方相及单斜相。薄膜表现为自由取向生长 ,晶粒尺寸随沉积温度升高而增大。同时发现薄膜中的残余应力随沉积温度的升高 ,由张应力状态变为压应力状态 ,这一变化主要是薄膜结构变化引起的内应力的作用结果。同时讨论了不同沉积温度对ZrO2 薄膜光学性质的影响。

ZrO 2 films have been prepared by electron beam evaporation at different deposition temperature. The films have been characterized by X-ray diffraction (XRD) and atom force microscopy (AFM). At room temperatures, the structure of ZrO 2 films is amorphous. With the increase of deposition temperature, the films begin to crystallize. Both tetragonal and monoclinic phases have been found. All films show random orientation. The crystallite size increases as deposition temperature increases. The residual stress of ZrO 2 films varies from tensile to compressive which was mainly caused by intrinsic stress. The influence of deposition temperature on the optical properties of ZrO 2 films has been also discussed.