隧道带间级联双波长半导体激光器热特性模拟

Thermal Characteristic Simulation of Dual-wavelength Laser Diode Cascaded by Tunnel Junction

介绍了隧道带间级联双波长半导体激光器的工作机理,分析了其热量产生的根源,利用有限单元法对热传导方程进行了数值计算,得到了其在脉冲工作下的二维瞬态热分布,结果表明:随着时间的变化,有源区温度逐渐升高,靠近衬底的有源区温度略高一些,这是由于其远离热沉的原因。同时计算了不同占空比下器件内部的温度变化趋势,结果表明随着占空比增大,器件内部热量会逐渐积累,对器件特性会产生影响。

The working mechanism of dual-wavelength laser diode cascaded by tunnel junction was introduced and the heat source of the device was analyzed. By using the finite element method to solve the thermal conduction equation, the thermal distribution of the laser diode at pulse current was obtained. With time lapsing the temperature of the active region close to the substrate is higher than that of the active region close to the heat sink. The temperature variety trends at different duty ratio were calculated. With the increase of the duty ratio, heat in the active regions accumulates gradually, it will influence the device characteristic.