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热致晶化高反射率SbO_x薄膜的结构分析和光学性质 被引量:3

Structure Analysis and Optical Properties of Heat-Induced Crystalline High Reflection SbO_x Films
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摘要 利用直流磁控反应溅射法制备了SbOx 薄膜 ,利用X射线衍射分析仪和光谱仪分别研究了这种薄膜热致晶化的微观结构和光学性质的变化 ,并通过非晶态薄膜粉末的示差扫描量热实验测出不同加热速度条件下结晶峰温度 ,研究了这种薄膜的结晶动力学。发现沉积态SbOx 薄膜为非晶态 ,非晶态SbOx 薄膜在热致晶化过程中发生了两种变化 ,分别对应为较低温度下Sb晶体和较高温度下立方Sb2 O3 相的生成。退火后晶态薄膜中出现了单质Sb和Sb2 O3 ,30 0℃退火后Sb2 O3 相含量最大。晶态薄膜的反射率均高于沉积态 ,在晶态薄膜中 2 0 0℃退火的薄膜反射率最大。 SbO x thin films were prepared by the method of reactive dc magnetron sputtering; the optical properties and structural changes of the films were studied by using X ray diffraction analysis and spectrometer respectively. By using the differential scanning calorimeter data of the amorphous film powder, measuring the peak temperature of crystallization at different heating rates, the crystallization kinetics of the thin films were studied.The results indicated that the as deposited films were amorphous and there were two stages during the heat induced crystallization. The first stage was the nanocrystallization of a primary phase antimony; the second stage was related to the formation of cubic Sb 2O 3 phase at higher temperatures. The Sb and Sb 2O 3 existed in crystalline films after annealed and there were much more Sb 2O 3 in 300 ℃ annealed films. The reflectivity of crystalline films was higher than that of the as deposited films. The reflectivity of 200 ℃ annealed film was the highest in all crystalline films.
出处 《光学学报》 EI CAS CSCD 北大核心 2004年第7期890-892,共3页 Acta Optica Sinica
基金 国家自然科学基金 (6 0 2 0 70 0 5 )资助课题
关键词 光存储 SbOx薄膜 热致晶化 光学性质 示差扫描量热 optical storage SbO x thin films heat-induced crystallization optical properties differential scanning calorimeter
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  • 1Ohta T, Takenaga M, Akahira Net al.. Thermal changes of optical properties observed in some suboxide thin films.J. Appl. Phys., 1983, 53(12):8497~8500.
  • 2Akahira N, Ohta T, Takenaga Met al.. Sub-oxide thin films for an optical recording disk. Proc. SPIE, 1982,329 : 195 ~ 201.
  • 3Afonso C N, Morilla M C, Solis Jet al.. Fast-crystallizing Sb-based thin films under pico- and nanosecond laser pulses. Mater. Sci. Engng. , 1993, A173:343~346.
  • 4Missana T, Afonso C N, Petford-Long A K et al..Amorphous-to-nanocrystalline transformation kinetics in SbOx, films. Philosophical Magazine A, 1999, 79 (10) :2577~2590.
  • 5Men Liqiu, Tominaga Junji, Fuji Hiroshi et al.. The Effects of metal-doped GeSbTe films on light scatteringmode super-resolution near-field structure (Super-RENS).Jpn. J. Appl. Phys., 2001, 40(3B):1629~1633.

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  • 2张广军,顾冬红,李青会,干福熹,刘音诗.新型AgInSbTe相变薄膜的结晶活化能研究[J].无机材料学报,2005,20(1):230-234. 被引量:2
  • 3高秀敏,徐文东,周飞,干福熹.模块化蓝光光存储性能静态测试系统[J].中国激光,2005,32(8):1127-1131. 被引量:7
  • 4Ramanujam P S, Hvilsted S, Ujhelyi F, et al. Phiysics and technology of optical storage in polymer thin films [ J ]. Synthetic Met. , 2001,124:145.
  • 5Herman J Borg, Roel van Woudenberg. Trends in optical recording[ J ]. J. Magn. Magn. Mater. , 1999,193:519 -520.
  • 6Holger Hofmann, S oren Dambach, Hartmut Richter. Blue laser phase change recording system [ J ]J. Magn. Magn. Mater. , 2002,499:503.
  • 7Jeong T H, Kim M R, Seo H, et al. Crystallization behavior of sputter deposited amorphous Ge2 Sb2 Te5 thin films. J. Appl. Phys., 1999 , 8979 (86) : 774-778.
  • 8Guo-Fu Zhou. Materials aspects in phase change optical recording [J] . Mat. Sci. Eng. A. , 2001, 304:73 -80.
  • 9E Morales-Sanchez, Prokhorov E F, J Gonzalez-Hernandez, et al. Structural, electric and kinetic parameters of ternary alloys of GeSbTe [ J ] . Thin Solid Films, 2005, 471:243 -247.
  • 10Ming Fang, QingHui Li, Fuxi Gan. Optical absorption properties of GeSbTe films [ J ] . Chinese optics letters, 2004, 2 (3): 177-178.

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