期刊文献+

An Integratable Distributed Bragg Reflector Laser by Low-Energy Ion Implantation Induced Quantum Well Intermixing

使用低能离子注入导致的量子阱混杂方法制作可集成的分布式Bragg反射激光器(英文)
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摘要 An integratable distributed Bragg reflector laser is fabricated by low energy ion implantation induced quantum well intermixing.A 4 6nm quasi continuous wavelength tuning range is achieved by controlling phase current and grating current simultaneously,and side mode suppression ratio maintains over 30dB throughout the tuning range except a few mode jump points. 采用量子阱混杂的方法制作了可集成的分布式 Bragg反射激光器 .通过同时控制相位区和光栅区的注入电流 ,该激光器的波长可以准连续地调谐 4 .6 nm .在整个调谐范围内 ,除了少数几个模式跳变点以外 ,激光器的单模特性保持良好 ,边模抑制比均达到了 30 d
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2004年第8期894-897,共4页 半导体学报(英文版)
基金 国家高技术研究发展计划 (批准号 :2 0 0 2 AA3 12 15 0 ) 国家重点基础研究发展规划 (批准号 :G2 0 0 0 0 683 -1)资助项目~~
关键词 photonic integrated circuit distributed Bragg reflector laser quantum well intermixing wavelength tuning 光子集成回路 分布式Bragg反射激光器 量子阱混杂 波长调谐
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参考文献9

  • 1Johnson J E,Ketelsen L J P,Geary J M,et al. 10Gb/s trans mission using an electroabsorption modulated distributed Bragg reflector laser with integrated semiconductor optical amplifier. Optical Fiber Conference, 2001: TuB3-2
  • 2Masanovic M,Skogen E,Barton J S,et al. Demonstration of monolithically-integrated InP widely-tunable laser and SOAMZI wavelength converter. 15 th Proc Indium Phosphide and Related Materials Conference, 2003,WB2.2: 289
  • 3McKee A,McLean C J,Lullo G,et al. Monolithic integration in InGaAs-InGaAsP multiple quantum-well structures using laser intermixing. IEEE J Quantum Electron,1997,33:45
  • 4Lee M K,Song J D,Yu J S,et al. Intermixing behavior in InGaAs/InGaAsP multiple quantum wells with dielectric and InGaAs capping layers. Appl Phys A, 2001,73: 357
  • 5Wolf T,Shieh C L,Engelmann R,et al. Lateral refractive index step in GaAs/AlGaAs multiple quantum well waveguides fabricated by impurity induced disordering. Appl Phys Lett,1989,55:1412
  • 6Aimez V,Beauvais J,Beerens J,et al. Low-energy ion-implantation-induced quantum-well intermixing. IEEE J Sel Topics Quantum Electron, 2002,8 (4): 870
  • 7Chen H,Feenstra R M,Piva P G,et al. Enhanced group-V intermixing in InGaAs/InP quantum wells studied by cross-sectional scanning tunneling microscopy. Appl Phys Lett, 1999,75:79
  • 8Zhang Jing,Lu Yu,Wang Wei. Quantum well intermixing of InGaAsP QWs by impurity free vacancy diffusion using SiO2encapsulation. Chinese Journal of Semiconductors, 2003, 24(8):785
  • 9Lu Yu, Zhang Jing, Wang Wei, et al. Wavelength tuning in two-section distributed Bragg reflector laser by selective intermixing of InGaAsP-InGaAsP quantum well structure. Chinese Journal of Semiconductors, 2003,24(9) : 903

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