离子束淀积方法制备GdSi_2薄膜

Fabrication of GdSi_2 Films by Ion-Beam Deposition

采用离子束淀积方法制备了单相 Gd Si2 薄膜 .用俄歇电子谱仪对样品的成分进行了分析 ,用 X射线衍射方法分析了样品的结构 ,并用扫描电子显微镜观察了样品的表面形貌 .X射线衍射分析发现在 4 0 0℃沉积的样品中仅存在正交的 Gd Si2 相 .样品在氩气氛中 35 0℃ ,30 m in退火处理后 ,Gd Si2 相衍射峰的半高宽变窄 ,说明经过退火处理 ,Gd Si2

Single phase gadolinium disilicide is fabricated by a technique of ion beam deposition. The composition of samples is investigated by Auger electron spectroscopy. The structure of samples is analyzed by X ray diffraction and the surface morphology is investigated by scannig electron microscopy. X ray diffraction indicates that only orthorhombic GdSi 2 phase is found in the sample deposited at 400℃. After annealing at 350℃ for 30min at Ar atmosphere, the full width at half maximum of GdSi 2 becomes narrower. It indicates that the GdSi 2 is crystallized better after annealing.