摘要
利用微波气相沉积方法制备了低电阻率的 n型硫掺杂和硼硫共掺杂金刚石薄膜 .质子激发 X射线荧光测试表明硼硫共掺杂方法能够提高硫在金刚石中的溶解度 ;扫描电镜和 Raman光谱的分析结果表明掺杂金刚石薄膜的晶粒较完整 ,薄膜中存在较多的非金刚石碳相 .Hall效应测试表明薄膜的导电类型为 n型 ,电阻率为 0 .0 2 4 6 Ω·cm,载流子浓度为 2 .4 0× 1 0 1 7cm- 3,Hall迁移率为 1 0 3cm2 / (V· s) ;较低的电阻率是薄膜中存在
n type boron and sulfur co doped diamond films with Low resistivtiy are prepared by microwave CVD method.PIXE measurements show that the boron and sulfur co doping increases the solubility of sulfur in diamond.SEM and Raman measurements indicate that there exist a few amount of amorphous and graphite phasets in the doped diamond films.Hall effect measurements show that the doped diamond films exhibit n type conduction,and the resistivity,carrier concentration,and Hall mobility are 0 0246Ω·cm,2 40×10 17 cm -3 ,and 10 3 cm 2/(V·s),respectively.The multiple roles of sulfur and sp 2 carbon contribute to the low resistivity of doped diamond films.
基金
国家自然科学基金资助项目 (批准号 :5 0 0 82 0 0 5 )~~
关键词
共掺杂
硼硫
N型
金刚石
电阻率
co doping
boron and sulfur
n type
diamond
resistivity
