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一种CMOS蓝牙无线发送器电路 被引量：3

A CMOS Bluetooth Wireless Transmitter
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摘要 实现了一种低中频架构的 CMOS蓝牙无线发送器 ,提出一种漏极开路输出的功率放大器电路结构 .采用0 .35 μm数字 CMOS工艺制造 .测试结果表明 :该电路在 3.3V电压下总静态电流为 1 9m A;低频的二个 DAC,二路低通滤波器和电压 /电流转换电路均达到了设计指标 ;在实现功率控制的同时 。 A Bluetooth wireless transmitter of low IF architecture is implemented, and a power amplifier topology with drain open output is presented. The circuits are fabricated in 0.35μm digital CMOS process. The test result shows that the total static current is 19mA under 3.3V power supply; the performance of low frequency circuits, dual DAC, LPF, and V I conversion, meets the requirements; and the radio frequency signals can be transmitted with controllable output power.
作者 王方林 衣晓峰 崔福良 李丹 方晗 洪志良
机构地区 复旦大学微电子系集成电路设计实验室
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2004年第8期1030-1035,共6页 半导体学报（英文版）
基金 上海市信息技术创新计划资助项目 (合同号 :沪 CX2 0 0 10 0 18)~~
关键词 无线发送器 蓝牙 互补金属氧化物半导体 wireless transmitter bluetooth CMOS
分类号 TN836 [电子电信—信息与通信工程]
  • 相关文献

参考文献10

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共引文献8

同被引文献21

  • 1Otaka S, Fujimoto R, Tanimoto H. 1.9G direct conversion transmitter IC with low power on-chip frequency doubler. Analog Integrated Circuits and Signal Processing, 2000,25:261
  • 2Razavi B. Design of analog CMOS integrated circuits. Singapore: McGraw-Hill, 2001: 508
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  • 6Xu Qiming,Shi Yin, Gao Peng,et al. A DC-offset cancellation scheme in a direct-conversion receiver for IEEE 802.11a WLAN. Chinese Journal of Semiconductors, 2006, 27(4):653
  • 7Tang Lu,WangZhigong,HuangTing, et al. Design of a monolithic CMOS LC-voltage controlled oscillator with low phase noise for 4GHz frequency synthesizers. Chinese Journal of Semiconductors,2006,27(3):459
  • 8Yoon S W,Park E C,Lee C H,et al. 5-6GHz-band GaAs MESFET-based cross-coupled differential oscillator MMIC's with low phase-noise performance. IEEE Microw Wireless Compon Lett,2001,11(12):495
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  • 10Kinget P. A fully integrated 2. 7V 0.35μm CMOS VCO for 5GHz wireless applications. ISSCC Dig Tech Papers, 1998:226

引证文献3

二级引证文献1

Journal of Semiconductors
2004年 第8期

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