摘要
A new method for preparing effective inhibition film on copper has been developed. Phenylthiourea (PT) was first absorbed to copper surface to form a monolayer. 1-Dodecanethiol (DT) was then assembled on the surface for modification. Finally, AC voltage was loaded on copper covered the mixed film to improve it further. After these processes, an effective inhibition film was gained because of its high charge transfer resistance and low corrosion current density shown in electrochemical impedance spectra and polarization. The inhibition efficiency was more than 97%.
A new method for preparing effective inhibition film on copper has been developed. Phenylthiourea (PT) was first absorbed to copper surface to form a monolayer. 1-Dodecanethiol (DT) was then assembled on the surface for modification. Finally, AC voltage was loaded on copper covered the mixed film to improve it further. After these processes, an effective inhibition film was gained because of its high charge transfer resistance and low corrosion current density shown in electrochemical impedance spectra and polarization. The inhibition efficiency was more than 97%.
基金
Subsidized with the Special Funds for the Major State Basic Research Projects G19990650 and the Chinese National Science Fund (No. 20173033).
