期刊文献+

Synthesis of Ti_3SiC_2 by spark plasma sintering(SPS) of elemental powders 被引量:1

Synthesis of Ti_3SiC_2 by spark plasma sintering(SPS) of elemental powders
下载PDF
导出
摘要 Ti 3SiC 2 materials have been fabricated by spark plasma sintering of the elemental powders with the addition of Al. At the heating rate of 80 ℃/min and under the pressure of 30 MPa, the ideal synthesis temperature of Ti 3SiC 2 is in the range of 1 1501 250 ℃. The addition of Al is in favor of the formation of Ti 3SiC 2. The synthesized compound has the molecular of Ti 3Si 0.8Al 0.2C 2 and lattice parameters of a=0.306 9 nm, c=1.767 0 nm. Its grain is plane-shape with a size of about 50 μm in the elongated dimension. The prepared material has Vickers hardness of 3.55.5 GPa(at 1 N and 15 s) and is as readily machinable as graphite’s. Ti 3SiC 2 materials have been fabricated by spark plasma sintering of the elemental powders with the addition of Al. At the heating rate of 80 ℃/min and under the pressure of 30 MPa, the ideal synthesis temperature of Ti 3SiC 2 is in the range of 1 1501 250 ℃. The addition of Al is in favor of the formation of Ti 3SiC 2. The synthesized compound has the molecular of Ti 3Si 0.8Al 0.2C 2 and lattice parameters of a=0.306 9 nm, c=1.767 0 nm. Its grain is plane-shape with a size of about 50 μm in the elongated dimension. The prepared material has Vickers hardness of 3.55.5 GPa(at 1 N and 15 s) and is as readily machinable as graphite's.
出处 《中国有色金属学会会刊:英文版》 CSCD 2003年第1期46-49,共4页 Transactions of Nonferrous Metals Society of China
基金 Project( 5 0 172 0 37)supportedbytheNationalNaturalScienceFoundationofChina
关键词 TI3SIC2 合成技术 火花等离子体烧结 粉末 钛硅碳三元化合物 Ti 3SiC 2 synthesis spark plasma sintering
  • 相关文献

参考文献13

  • 1Barsoum M W, EI-Raghy T. Synthesis and characterization of a remarkable ceramic: Ti3 SiC2 [J]. J Am Ceram Soc, 1996, 79(7): 1945 - 1956.
  • 2EI-Raghy T, Zavalianges A, Barsoum M W, et al.Damage mechanisms around hardness indentations in Ti3 SiC2 [J]. J Am Ceram Soc, 1997, 80(2): 513-516.
  • 3Barsoum M W, EI-Raghy T, Rawn C, et al. Thermal properties of Ti3SiC2[J]. J Phys Chem Solids, 1999,60(1): 429-439.
  • 4EI-Raghy T, Barsoum M W, Zavalianges A, et al.Processing and mechanical properties of Ti3SiC2, Part Ⅱ: mechanical properties [J]. J Am Ceram Soc,1999, 82(10): 2855-2860.
  • 5Barsoum M W, EI-Raghy T. Ductile carbides[J]. Mater Trans, 1999, 30A: 363-369.
  • 6Barsoum M W, EI-Raghy T, Ogbuji L, et al. Oxidation behavior of Ti3SiC2 in the temperature range of 900- 1 400℃ [J]. J Electrochem Soc, 1997, 144:2508- 2516.
  • 7Crssiey A, Kisi R H, Summers J W B, et al. Ultralow friction for a layered carbide-derived ceramic,Ti3 SiC2, investigated by lateral force microscopy (LFM)[J]. J Appl Phys, 1999, 32(9): 632-639.
  • 8Jeitschlo W, Nowotny H. Die Kristallstructur yon Ti3SiC2-ein neuer komplexcarbid-typ [J]. Monatash Chem, 1967, 98(2): 329 - 337.
  • 9Goto T, Hirai T. Chemically vapor deposited Ti3SiC2[J]. Mat Res Bull, 1987, 22(4): 1195-1202.
  • 10EI-Raghy T, Barsoum M W. Processing and mechanical properties of Ti3SiC2: Ⅰ , reaction path and microstructure evolution[J]. J Am Ceram Soc, 1999,82(10): 2849 - 2854.

同被引文献3

引证文献1

二级引证文献2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部