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重掺硅衬底材料中氧沉淀研究进展 被引量：1

Development on oxygen precipitation in heavily-doped Si
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摘要 对国内外在重掺硅中氧沉淀方面的研究做了综合阐述,对氧沉淀研究现状和存在问题进行了讨论,同时就热处理,掺杂剂对氧沉淀的影响做了浅析,使人们对重掺硅衬底中氧沉淀这一领域有更深的认识。 In order to make people further understand the behavior of oxygen precipitation inheavily-doped Si and serve the industry of micro-electronics, the studies of oxygen precipitation inheavily doped Si in the world are summarized. Development and problems at present are discussedsimultaneously, and effects of heat treatment and dopants on oxygen precipitation are analyzed.
作者 张红娣 刘彩池
机构地区 河北工业大学半导体材料研究所
出处 《半导体技术》 CAS CSCD 北大核心 2004年第6期76-79,共4页 Semiconductor Technology
关键词 重掺硅 氧沉淀 掺杂剂 热处理 heavily-doped Si oxygen precipitation dopant heat treatment
分类号 TN305.3 [电子电信—物理电子学]
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参考文献14

  • 1TAN T Y, GARDER E E, TICE W K. Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si[J]. Appl Phys Lett, 1977,30:175.
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二级参考文献3

  • 1张一心.硅中铁对氧碳沉淀的影响[J]半导体学报,1987(03).
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同被引文献7

  • 1NOZAKI T, ITOH Y, MASUI T, et al. Behavior of oxygen in the crystal formation and heat treatment of silicon heavily doped with antimony [J] .J App Phys, 1956,59(7): 2562- 2565.
  • 2HUANG X M, TERASHIMA K, SASKI H, et al. Oxygen solubilities in Si melt:influence of Sb addition [J] .Jpn J Appl Phys, 1993,32 : 3671 - 3674.
  • 3SEMI标准MF1727-0304,, Standard Practice for Detection of Oxidation Induced Defects in Polished Silicon Wafers [S].
  • 4SEMI标准MF1809-0704,Standard Guide for Selection and Use of Etching Solutions to Delineate Structural Defects in Silicon [S].
  • 5江瑞生.半导体物理测试[M].中国有色金属工业总公司职工教育教材审编办公室,1986:53.
  • 6罗木昌,杨德仁,阙端麟.CZ重掺锑硅单晶的锑和氧杂质[J].半导体技术,1999,24(5):30-33. 被引量：1
  • 7黄笑容,杨德仁,沈益军,王飞尧,马向阳,李立本,阙端麟.重掺杂直拉硅单晶氧沉淀及其诱生二次缺陷[J].Journal of Semiconductors,2004,25(6):662-667. 被引量：3

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半导体技术
2004年 第6期

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