氨化合成一维GaN纳米线

Synthesis of One-Dimensional GaN Nanowires by Ammoniating

用氨化溅射Ga2O3薄膜的方法,成功地合成了一维GaN纳米线。用X射线衍射仪(XRD)、扫描电镜(SEM)、透射电镜(TEM)和高分辨电镜(HRTEM)对样品进行了分析。生成的GaN纳米线平直光滑,其直径为20 nm^90 nm,长可达50 祄;纳米线为高质量的单晶六方纤锌矿GaN,沿[110]方向生长。用此工艺制备GaN纳米线,避免了在制备过程中引入杂质,合成的纳米线纯度较高。

A high-quality gallium nitride nanowire were synthesized through ammoniating Ga2O3 thin films deposited by rf magnetron' sputtering. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and-high-resolution transmission electron microscopy (HRTEM) were used to characterize the composition, morphology and structures of the samples. The formed straight and smooth GaN nanowires had diameters of 20 nmsimilar to90 nm and lengths up to 50 gm. The nanowires are high quality GaN single crystal with the hexagonal wurtzite and possess the growth direction of [110]. This is a simple and novel technique fabricating high quality GaN nanowires without the assistance of a template or catalyst.