金属有机物化学气相沉积法沉积镍膜的影响因素

Deposition of Nickel Film by MOCVD and Relevant Factors Discussion

为了获得高速沉积镍膜的工艺参数 ,以羰基镍 [Ni(CO) 4 ]为前驱体 ,用金属有机物化学气相沉积法进行试验 ,以SEM ,DSC ,XRD测试分析技术探讨了载气、温度和羰基镍的摩尔分数对沉积速率的影响 ;也探讨了温度及羰基镍的摩尔分数对镍膜微观形貌的影响。结果表明 ,以氩气为载气比氦气为载气更容易获得高沉积速率 ;在沉积温度为 15 0℃左右可获得沉积速率较快、微观形貌较好的薄膜 ;随羰基镍摩尔分数的增加 ,沉积速率也明显增大 ,同时薄膜的微观形貌也变得较为粗大 ,但达到 30 %之后 ,沉积速率增速减缓。

In order to obtain the processing parameters of high speed depositing nickel film, experiment was undergone by metallic organic chemical vapor deposition (MOCVD) with nickel carbonyl as precursor. By means of SEM, DSC and XRD, the influences of cartier gas,temperature and the mol percentage of nickel carbonyl on the deposit rate were discussed, and also the effects of temperature and the mol percentage of nickel carbonyl on the micro- morphology of nickel film were investigated. High deposit rate is more easily reached using argon as carrier gas than using helium gas, and nickel film with preferable micro- morphology and higher deposit rate is obtained at about 150 ℃. With the increase of the mol percentage of nickel carbonyl, deposit rate increases evidently until the ratio is up to 30%, and micro- morphology of nickel film becomes bulkier and bulkier.